Paramagnetic defects in GaN
نویسندگان
چکیده
منابع مشابه
Defects in GaN Nanowires
High resolution and cross-sectional transmission electron microscopy (HRTEM, XTEM) were used to characterize common defects in wurtzite GaN nanowires grown via the vapor-liquid-solid (VLS) mechanism. High resolution transmission electron microscopy showed that these nanowires contained numerous (001) stacking defects interspersed with cubic intergrowths. Using cross-sectional transmission elect...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1998
ISSN: 1092-5783
DOI: 10.1557/s1092578300001174